DocumentCode
2973785
Title
Reverse pillar and maskless contact-two novel recessed metal schemes and their comparisons to conventional VLSI metallization schemes
Author
Yeh, J.L. ; Hills, G.W. ; Cochran, W.T.
Author_Institution
AT&T Bell Lab., Allentown, PA, USA
fYear
1988
fDate
13-14 June 1988
Firstpage
95
Lastpage
100
Abstract
Two novel metallization schemes, reverse pillar and maskless contact, based on the recessed metal approach, are discussed. The reverse-pillar process offers a self-aligned headless contact for optimum layout. The maskless contact scheme removes the need for a contact lithographic step. The schemes are compared to the conventional metallization schemes. Both the advantages and disadvantage of the schemes are discussed. Both schemes offer the advantages of planarization and easy integration into standard multilevel metal approaches.<>
Keywords
VLSI; integrated circuit technology; metallisation; VLSI metallization schemes; maskless contact; multilevel metal approaches; optimum layout; planarization; recessed metal schemes; reverse pillar; self-aligned headless contact; Dielectrics; Etching; Filling; Lithography; Metallization; Planarization; Resists; Smoothing methods; Surfaces; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location
Santa Clara, CA, USA
Type
conf
DOI
10.1109/VMIC.1988.14180
Filename
14180
Link To Document