• DocumentCode
    2973785
  • Title

    Reverse pillar and maskless contact-two novel recessed metal schemes and their comparisons to conventional VLSI metallization schemes

  • Author

    Yeh, J.L. ; Hills, G.W. ; Cochran, W.T.

  • Author_Institution
    AT&T Bell Lab., Allentown, PA, USA
  • fYear
    1988
  • fDate
    13-14 June 1988
  • Firstpage
    95
  • Lastpage
    100
  • Abstract
    Two novel metallization schemes, reverse pillar and maskless contact, based on the recessed metal approach, are discussed. The reverse-pillar process offers a self-aligned headless contact for optimum layout. The maskless contact scheme removes the need for a contact lithographic step. The schemes are compared to the conventional metallization schemes. Both the advantages and disadvantage of the schemes are discussed. Both schemes offer the advantages of planarization and easy integration into standard multilevel metal approaches.<>
  • Keywords
    VLSI; integrated circuit technology; metallisation; VLSI metallization schemes; maskless contact; multilevel metal approaches; optimum layout; planarization; recessed metal schemes; reverse pillar; self-aligned headless contact; Dielectrics; Etching; Filling; Lithography; Metallization; Planarization; Resists; Smoothing methods; Surfaces; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
  • Conference_Location
    Santa Clara, CA, USA
  • Type

    conf

  • DOI
    10.1109/VMIC.1988.14180
  • Filename
    14180