The study of the influence of the layer resistivity of thin epitaxial Si cells

Author

Evrard, O. ; Vermeulen, T. ; Poortmans, J. ; Caymax, M. ; Laermans, P. ; Nijs, J. ; Mertens, R.

Author_Institution

IMEC, Leuven, Belgium

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1567

Abstract

Epitaxial layers on heavily doped CZ substrates were grown in an APCVD epitaxial system with different epitaxial layer resistivities: 0.2, 0.5, 1.0 and 2.5 ohm.cm, in order to investigate the influence of the resistivity on the solar cell characteristics. Textured and untextured layers were compared. I-V characteristics under normalised AM 1.5 illumination, dark I-V and spectral response were measured. The efficiencies and the photogenerated current were found to increase with increasing layer resistivities in the range of their investigations

Keywords

CVD coatings; chemical vapour deposition; crystal growth from melt; electrical resistivity; elemental semiconductors; liquid phase epitaxial growth; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 0.2 ohmcm; 0.5 ohmcm; 1 ohmcm; 13.3 percent; 14.5 percent; 14.9 percent; 2.5 ohmcm; APCVD epitaxial system; I-V characteristics; Si; dark current; heavily doped CZ substrates; layer resistivities; photogenerated current; semiconductor; solar cell characteristics; spectral response; textured layers; thin epitaxial solar cells; untextured layers; Conductivity; Dark current; Diodes; Doping; Epitaxial growth; Epitaxial layers; Etching; Lighting; Photovoltaic cells; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520514

Filename

520514