Title :
Advantage of carbon nannotube field effect transistor (CNTFET) over double-gate MOSFET in nanometre regime
Author :
Sinha, Sujeet Kumar ; Chaudhury, Santanu
Author_Institution :
Dept. of Electr. Eng., Nat. Inst. of Technol., Silchar, India
Abstract :
Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for double gate MOSFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is not possible to get in double gate MOSFET.
Keywords :
MOSFET; carbon nanotube field effect transistors; CNTFET; carbon nanotube field effect transistor; double-gate MOSFET; gate capacitance; high channel mobility; nanometre regime; voltage characteristics; CNTFETs; Insulators; Logic gates; MOSFET circuits; Quantum capacitance; Silicon; CNTFET; MOSFET; double gate MOSFET (DG-MOSFET); inversion layer capacitance; oxide-thickness; quantum capacitance;
Conference_Titel :
Computing and Communication Systems (NCCCS), 2012 National Conference on
Conference_Location :
Durgapur
Print_ISBN :
978-1-4673-1952-2
DOI :
10.1109/NCCCS.2012.6412983
