22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing

Author

Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki ; Nagayama, Tsutomu ; Muthukrishnan, Shankar ; Zelenko, Jeremy ; Mirshad, Iad ; Johnson, Walt ; Buyuklimanli, Temel ; Itokawa, Hiroshi ; Mizushima, Ichiro ; Suguro, Kyoichi

Author_Institution

J.O.B. Technol., Aiea, HI, USA

fYear

2009

fDate

Sept. 29 2009-Oct. 2 2009

Firstpage

1

Lastpage

8

Abstract

We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C₇H₇) with P₄ implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm³ and a Csub level of 1.52% for Sb-PAI+C₇+P₄ was realized with s strain layer depth of 50 nm using a 1325Â°C peak laser anneal temperature.

Keywords

amorphisation; doping; ion implantation; laser beam annealing; silicon compounds; wide band gap semiconductors; SiCP; amorphization techniques; high temperature laser annealing; implant doping; ion implantation; laser anneal temperature; n+SiCP stressors; pre-amorphizing implants; strain layer; Amorphous materials; Annealing; Capacitive sensors; Doping; Implants; Lattices; Optical materials; Silicon carbide; Strain control; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on

Conference_Location

Albany, NY

ISSN

1944-0251

Print_ISBN

978-1-4244-3814-3

Electronic_ISBN

1944-0251

Type

conf

DOI

10.1109/RTP.2009.5373426

Filename

5373426