Title :
Microwave permittivity of As and B implanted and annealed silicon
Author :
Lojek, B. ; Song, H. ; Mulcahy, T.
Author_Institution :
Atmel Corp., Colorado Springs, CO, USA
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
The absorption of energy from electromagnetic fields always involves the conversion of electromagnetic energy into the heat. Dissipated power density is proportional to dielectric loss. In this work we investigate dielectric loss (complex permittivity) of intrinsic and extrinsic Cz and Fz silicon in the X microwave band. The mechanism of the interaction of microwave irradiation with non-polar elemental semiconductors is discussed.
Keywords :
annealing; arsenic; boron; dielectric losses; elemental semiconductors; permittivity; silicon; Si:As; Si:B; X microwave band; annealed silicon; complex permittivity; dielectric loss; dissipated power density; electromagnetic energy conversion; electromagnetic fields; energy absorption; microwave irradiation; microwave permittivity; nonpolar elemental semiconductors; Annealing; Chemical technology; Dielectric losses; Electromagnetic heating; Electromagnetic wave absorption; Microwave devices; Microwave technology; Permittivity; Silicon; Temperature;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
Electronic_ISBN :
1944-0251
DOI :
10.1109/RTP.2009.5373431
