DocumentCode :
2974569
Title :
Developing a novel patent map to explore R&D directions and technical gaps for thin-film photovoltaic industry
Author :
Chang, D.S. ; Kao, C.H.
Author_Institution :
Dept. of Bus. Adm., Nat. Central Univ., Chungli, Taiwan
fYear :
2009
fDate :
8-11 Dec. 2009
Firstpage :
59
Lastpage :
63
Abstract :
This paper addresses a novel technical patent map to effectively mining the patent information among assignee, patent classification, and filing date on thin-film photovoltaic. The proposed technical patent map provides an overall view of technological advancement that allows researchers to monitor competitor deployments, mine the techniques gap, and forecast technology trends. There are 164 patent documents approved by the United States Patent and Trademark Office is employed in the patent analysis. Results indicate that thin-film photovoltaic technology focuses on the fields related to semiconductor devices and the surface treatment of metal materials, which can be deemed as foundational or popular types of technology. However, the technology related to refinement, manufacturing, and after-treatment for metal, monocrystalline, and polycrystalline materials, as well as plating, coating, and connecting surface technologies have been overlooked. In addition, the leading enterprises in capable of continuous innovation and cross-field technology R&D are further identified.
Keywords :
electricity supply industry; patents; photovoltaic power systems; research and development management; R&D direction; patent analysis; technical gap; technical patent map; thin-film photovoltaic industry; Inorganic materials; Monitoring; Photovoltaic systems; Semiconductor materials; Semiconductor thin films; Solar power generation; Surface treatment; Technology forecasting; Trademarks; Transistors; patent analysis; technical patent map; thin-film photovoltaic;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Engineering and Engineering Management, 2009. IEEM 2009. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4869-2
Electronic_ISBN :
978-1-4244-4870-8
Type :
conf
DOI :
10.1109/IEEM.2009.5373445
Filename :
5373445
Link To Document :
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