Title :
[Copyright notice]
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
This paper dealt with the following topics: CMOS device annealing process; doping; ion implantation; CV measurements; Hall effect; oxidation; laser spike annealing; SOI process; junction scaling; pulsed excimer laser annealing; device die-level stress variation; thermal annealing effects; dopant activation on semiconductor materials; thermal-probe laser damage annealing; laser treatment; photoionisation; heating; phosphors; interface segregation; power device IGBTs; four-point microprobe technology; Raman spectroscopic techniques; fault detection; microwave permittivity; and, other related topics.
Keywords :
CMOS integrated circuits; Hall effect; Raman spectra; annealing; doping; heat treatment; insulated gate bipolar transistors; ion implantation; laser beam annealing; laser beam effects; laser materials processing; oxidation; permittivity; phosphors; photoionisation; power semiconductor devices; rapid thermal annealing; semiconductor materials; surface segregation; CMOS device annealing process; CV measurements; Hall effect; Raman spectroscopic techniques; SOI process; device die-level stress variation; dopant activation; doping; fault detection; four-point microprobe technology; heating; interface segregation; ion implantation; junction scaling; laser spike annealing; laser treatment; microwave permittivity; oxidation; phosphors; photoionisation; power device IGBTs; pulsed excimer laser annealing; semiconductor materials; thermal annealing effects; thermal-probe laser damage annealing;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
DOI :
10.1109/RTP.2009.5373478
