Millisecond annealing of high-performance SiGe HBTs

This work reports on first experiments with millisecond flash anneals for SiGe HBTs. Model experiments on blanket wafers were used to study the effects of flash annealing on HBT-typical doping profiles in comparison to the standard spike annealing, and to find out an appropriate temperature range for transistor functionality. An integration lot was processed and analyzed to get a comprehensive insight into the capability of the flash anneal for SiGe HBT fabrication. Parameters of sheet resistances as well as static and dynamic transistor characteristics demonstrate the potential of this technique for the high-speed operation of SiGe HBTs.