Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology

Author

Wu, Tzung-Han ; Meng, Chinchun ; Huang, Guo-Wei

Author_Institution

Nat. Chiao Tung Univ., Hsin-Chu

fYear

2007

fDate

3-8 June 2007

Firstpage

2137

Lastpage

2140

Abstract

A GalnP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.

Keywords

bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; low noise amplifiers; microwave mixers; radiofrequency amplifiers; wideband amplifiers; GaInP-GaAs; HBT technology; RF front-end noise figure; frequency 1 GHz to 7 GHz; heterojunction bipolar transistor; inductorless broadband RF front-end; low noise wideband amplifier; micromixer; size 2 mum; Bandwidth; Broadband amplifiers; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Noise figure; Noise measurement; Radio frequency; Semiconductor device measurement; GaInP/GaAs HBT; Gilbert mixer; Micromixer; Wideband amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380347

Filename

4264293