Title :
Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology
Author :
Wu, Tzung-Han ; Meng, Chinchun ; Huang, Guo-Wei
Author_Institution :
Nat. Chiao Tung Univ., Hsin-Chu
Abstract :
A GalnP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
Keywords :
bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; low noise amplifiers; microwave mixers; radiofrequency amplifiers; wideband amplifiers; GaInP-GaAs; HBT technology; RF front-end noise figure; frequency 1 GHz to 7 GHz; heterojunction bipolar transistor; inductorless broadband RF front-end; low noise wideband amplifier; micromixer; size 2 mum; Bandwidth; Broadband amplifiers; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Noise figure; Noise measurement; Radio frequency; Semiconductor device measurement; GaInP/GaAs HBT; Gilbert mixer; Micromixer; Wideband amplifier;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380347
