DocumentCode :
2975608
Title :
Structure transformation of ZnO thin films properties influenced by substrate temperature deposited by magnetron sputtering
Author :
Sin, N. D Md ; Ahmad, S. ; Musa, M.Z. ; Mamat, M.H. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
fYear :
2012
fDate :
24-27 June 2012
Firstpage :
861
Lastpage :
865
Abstract :
The structure transformation of ZnO thin films properties influenced by substrate temperature deposited by RF Magnetron Sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation substrate temperature at 200°C~500°C on the ZnO thin films have been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emmision scanning electron microscopy (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). ZnO thin films were prepared at 200 watt by a RF magnetron sputtering using ZnO target using glass as the substrate. The IV measurement indicated as the substrate temperature increase, the conductivity of ZnO thin film increase. All films have show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about (<;8nm) was measured using AFM. The image form FESEM observed that transformation of structure started to change at high temperature (400~500°C).
Keywords :
II-VI semiconductors; atomic force microscopy; electrical conductivity; field emission electron microscopy; infrared spectra; scanning electron microscopy; semiconductor growth; semiconductor thin films; solid-state phase transformations; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; AFM; FESEM; IV measurement; JEOL JSM 7600F; RF magnetron sputtering; UV-Vis-NIR spectra; ZnO; atomic force microscopy; electrical conductivity; electrical properties; field emmision scanning electron microscopy; optical properties; park system XE-100; power 200 W; root mean square roughness; structural properties; structure transformation; substrate temperature; temperature 200 degC to 500 degC; thin film properties; two point probe current-voltage measurement; Conductivity; Magnetic films; Optical films; Substrates; Temperature; Temperature measurement; Zinc oxide; ZnO thin films; electrical properties; optical properties; structural properties; substrate temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-1311-7
Type :
conf
DOI :
10.1109/SHUSER.2012.6269002
Filename :
6269002
Link To Document :
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