DocumentCode
2975625
Title
Deposition temperature dependence of the sputtered nanocrystalline silicon thin films on Teflon substrates deposited by RF magnetron sputtering method
Author
Mahzan, N.H. ; Hashim, S.B. ; Herman, S.H. ; Noor, U. Mohd ; Rusop, M.
Author_Institution
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear
2012
fDate
24-27 June 2012
Firstpage
871
Lastpage
874
Abstract
Nanocrystalline silicon (nc-Si) thin films were deposited on polytetrafluoroethylene (PTFE, teflon) substrates using RF magnetron sputtering. The aim of this study was to study the physical and structural properties of nc-Si on the Teflon substrate. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin films are nc-Si thin films. The film thickness and the deposition rate increased with substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature.
Keywords
Raman spectra; amorphous semiconductors; crystallisation; elemental semiconductors; field emission electron microscopy; heat treatment; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; sputter deposition; FESEM; RF magnetron sputtering; Raman spectroscopy; Si; amorphous thin films; crystallization; deposition temperature dependence; field emission scanning electron microscopy; film thickness; heat treatment; high-temperature effects; low-temperature effects; nanocrystalline silicon thin film properties; physical properties; polytetrafluoroethylene substrates; structural properties; substrate temperature; teflon substrates; temperature 293 K to 298 K; Films; Plasma temperature; Radio frequency; Silicon; Sputtering; Substrates; Temperature dependence; Nanocrystalline silicon; RF magnetron sputtering; flexible substrate; polytetrafluoroethylene (PTFE);
fLanguage
English
Publisher
ieee
Conference_Titel
Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-1311-7
Type
conf
DOI
10.1109/SHUSER.2012.6269003
Filename
6269003
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