• DocumentCode
    2975625
  • Title

    Deposition temperature dependence of the sputtered nanocrystalline silicon thin films on Teflon substrates deposited by RF magnetron sputtering method

  • Author

    Mahzan, N.H. ; Hashim, S.B. ; Herman, S.H. ; Noor, U. Mohd ; Rusop, M.

  • Author_Institution
    Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
  • fYear
    2012
  • fDate
    24-27 June 2012
  • Firstpage
    871
  • Lastpage
    874
  • Abstract
    Nanocrystalline silicon (nc-Si) thin films were deposited on polytetrafluoroethylene (PTFE, teflon) substrates using RF magnetron sputtering. The aim of this study was to study the physical and structural properties of nc-Si on the Teflon substrate. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin films are nc-Si thin films. The film thickness and the deposition rate increased with substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature.
  • Keywords
    Raman spectra; amorphous semiconductors; crystallisation; elemental semiconductors; field emission electron microscopy; heat treatment; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; sputter deposition; FESEM; RF magnetron sputtering; Raman spectroscopy; Si; amorphous thin films; crystallization; deposition temperature dependence; field emission scanning electron microscopy; film thickness; heat treatment; high-temperature effects; low-temperature effects; nanocrystalline silicon thin film properties; physical properties; polytetrafluoroethylene substrates; structural properties; substrate temperature; teflon substrates; temperature 293 K to 298 K; Films; Plasma temperature; Radio frequency; Silicon; Sputtering; Substrates; Temperature dependence; Nanocrystalline silicon; RF magnetron sputtering; flexible substrate; polytetrafluoroethylene (PTFE);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-1311-7
  • Type

    conf

  • DOI
    10.1109/SHUSER.2012.6269003
  • Filename
    6269003