Title :
A universal formalization of the effects of threshold voltages for discrete switch-level circuit models
Author :
Körver, Wilbert H F J
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
In most discrete switch-level circuit models, switches, or transistors, are assumed to be perfect. That is, the effects of threshold voltages on signals are neglected in the discrete description of circuit behavior. In the formalization presented in this paper, the effects of imperfection of switches can be calculated separately from the abstracted circuit behavior. Furthermore, this formalization can be used in most existing discrete switch-level models, and leads to a more general and more accurate description of circuit behavior
Keywords :
CMOS digital integrated circuits; field effect transistor switches; integrated circuit modelling; switching circuits; CMOS design; demolition degree; discrete switch-level circuit models; state transitions; switch imperfection; threshold voltage effects; universal formalization; Delay; Integrated circuit interconnections; Low voltage; Petroleum; Semiconductor device modeling; Switches; Switching circuits; Threshold voltage; Wire;
Conference_Titel :
VLSI, 1995. Proceedings., Fifth Great Lakes Symposium on
Conference_Location :
Buffalo, NY
Print_ISBN :
0-8186-7035-5
DOI :
10.1109/GLSV.1995.516065