• DocumentCode
    2976526
  • Title

    53 GHz-f/sub max/ Si/SiGe Heterojunction Bipolar Transistors

  • Author

    Gruhle, A. ; Kibbel, H. ; Kasper, E.

  • Author_Institution
    Daimler-Benz AG
  • fYear
    1992
  • fDate
    21-24 June 1992
  • Keywords
    Annealing; Boron; Electrical resistance measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Metallization; Molecular beam epitaxial growth; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1992. Digest. 50th Annual
  • Conference_Location
    Cambridge, MA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1992.671850
  • Filename
    671850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2976526