Title :
Linearity study of DG MOSFETs
Author :
Lazaro, Antonio ; Cerdeira, A. ; Estrada, M. ; Nae, B. ; Iiguez, Benjamin
Author_Institution :
Dept. d ´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona
Abstract :
A compact explicit model for undoped Double-Gate (DG) SOI MOSFET including velocity saturation is presented. Using this model, intermodulation linearity obtained from device level Harmonic Balance (HB) simulation and Integral Function Method (IFM) are compared.
Keywords :
MOSFET; intermodulation; semiconductor device models; silicon-on-insulator; device level harmonic balance simulation; integral function method; intermodulation linearity; undoped double-gate SOI MOSFET; velocity saturation; Analytical models; Circuit simulation; Frequency; Integrated circuit modeling; Linearity; MOSFETs; Microwave circuits; Semiconductor films; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800435
