Design of an Integrated 2x4 Decoder Based on the Quantum Well MODFET to Reduce the Scale of the IC

Author

Shabani, Pejman

Author_Institution

Electr. Eng. Dept., Shahid Chamran Univ., Ahvaz

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

85

Lastpage

87

Abstract

The quantum well MODFET (QWMODFET) has two 2DEG layers. We paralleled these two thin layers by using diffused Au/Ge/Ni ohmic contacts. Two back and top controlling gate were used on both sides of the structure to control the switching property of 2DEG layers separately. In this case there are two transistors in the same position. An enhancement mode QWMODFET was used to design some basic gates such as NAND by only one QWMODFET. By using this method it will be possible to design and fabricate smaller integrated circuits in comparison with the other existing methods. Also the total delay time of a circuit will decrease. When the scale of an IC is decreased then the total quantity of a noise density will reduce in the output. The 2times4 decoder has been designed based on the QWMODFET to show the ability of the suggested model.

Keywords

high electron mobility transistors; integrated circuit design; integrated circuit noise; logic gates; ohmic contacts; quantum well devices; 2DEG layer; Au-Ge-Ni; IC scale reduction; enhancement mode; integrated circuit fabrication; integrated decoder design; noise density; ohmic contact diffusion; quantum well MODFET; switching property; Decoding; Delay effects; Electron devices; Gold; HEMTs; Integrated circuit layout; Integrated circuit noise; MODFET circuits; MODFET integrated circuits; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800436

Filename

4800436