High Frequency and Noise Model of Gate-All-Around MOSFETs

Author

Nae, B. ; Lazaro, A. ; Iniguez, B.

Author_Institution

Dept. of Electron., Electr. & Autom. Eng., Univ. Rovira i Virgili, Tarragona

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

112

Lastpage

115

Abstract

In this paper we study the influence of the quantum effects on DC, Radio Frequency (RF) and microwave noise for nanoscale SGT transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional (2D) Schrodinger and Poisson equations. RF and noise performances are calculated using the active transmission line method. A comparison between classical and quantum charge control models, and between drift-diffusion and hydrodynamic transport models is carried out.

Keywords

MOSFET; Poisson equation; diffusion; hydrodynamics; quantum optics; semiconductor device noise; 2D Schrodinger; DC current model; Poisson equations; active transmission line method; analytical charge model; drift-diffusion model; gate-all-around MOSFET; hydrodynamic transport model; microwave noise; nanoscale SGT transistors; noise model; nonstationary effects; quantum charge control models; quantum effects; radio frequency; self-consistent solution; Analytical models; Cutoff frequency; Degradation; Electron devices; Hydrodynamics; MOSFETs; Performance analysis; Poisson equations; Radio frequency; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800443

Filename

4800443