Title :
Improvement of the k.p Approach for Describing Silicon Quantum Dots
Author :
Rodríguez-Bolivar, S. ; Gómez-Campos, F.M. ; Luque-Rodríguez, A. ; López-Villanueva, J.A. ; Jiménez-Tejada, J.A. ; Lara-Bullejos, P. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada
Abstract :
We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.
Keywords :
effective mass; elemental semiconductors; semiconductor quantum dots; silicon; tight-binding calculations; Si; atomistic calculations; effective mass; hole confinement; kldrp algorithm; quantum dots; tight-binding framework; Atomic measurements; Computational efficiency; Computational modeling; Effective mass; Electron devices; Kinetic energy; Potential well; Quantum computing; Quantum dots; Silicon;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800446
