Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET

Author

Brown, Andrew R. ; Martinez, Antonio ; Seoane, Natalia ; Asenov, Asen

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

140

Lastpage

143

Abstract

The density gradient quantum correction to the conventional drift-diffusion simulation technique has become a well established method to include quantum mechanical effects without resorting to a full quantum transport solution. The results obtained from this method, however, can depend greatly on the values of certain parameters used, and it is usual to calibrate the simulation against more rigorous quantum transport simulations such as non-equilibrium Green´s functions (NEGF). Here we present an analysis of the effect of varying fitting parameters within density gradient and compare the results to NEGF simulations for a nanowire transistor.

Keywords

Green´s function methods; MOSFET; nanowires; semiconductor process modelling; semiconductor quantum wires; density gradient; drift-diffusion simulation; nanowire MOSFET; nanowire transistor; nonequilibrium Green´s functions; quantum correction; quantum mechanical effects; quantum transport simulations; three-dimensional simulation; Computational modeling; Effective mass; Electron devices; Green´s function methods; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum computing; Quantum mechanics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800450

Filename

4800450