DocumentCode
29771
Title
On the Crossing-Point of 4H-SiC Power Diodes Characteristics
Author
Di Benedetto, Luigi ; Licciardo, Gian Domenico ; Nipoti, R. ; Bellone, Salvatore
Author_Institution
Dept. of Ind. Eng., Univ. of Salerno, Fisciano, Italy
Volume
35
Issue
2
fYear
2014
fDate
Feb. 2014
Firstpage
244
Lastpage
246
Abstract
The presence of crossing points in the forward JD-VD curves of 4H-SiC pin diodes is analyzed by means of numerical and analytical models. The analysis allows one to justify the different temperature coefficients reported in the literature for SiC diodes and the interlacing behavior of their JD-VD curves. A simple formula for predicting the position of the crossing-point is proposed.
Keywords
p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC pin diode; 4H-SiC power diodes characteristic; JD-VD curve; SiC; analytical model; crossing point; numerical model; temperature coefficient; Anodes; Doping; P-i-n diodes; Resistance; Schottky diodes; Silicon carbide; 4H-polytype of silicon carbide (4H-SiC); Diodes; ion implantation; semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2294078
Filename
6685891
Link To Document