Title :
On the Crossing-Point of 4H-SiC Power Diodes Characteristics
Author :
Di Benedetto, Luigi ; Licciardo, Gian Domenico ; Nipoti, R. ; Bellone, Salvatore
Author_Institution :
Dept. of Ind. Eng., Univ. of Salerno, Fisciano, Italy
Abstract :
The presence of crossing points in the forward JD-VD curves of 4H-SiC pin diodes is analyzed by means of numerical and analytical models. The analysis allows one to justify the different temperature coefficients reported in the literature for SiC diodes and the interlacing behavior of their JD-VD curves. A simple formula for predicting the position of the crossing-point is proposed.
Keywords :
p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC pin diode; 4H-SiC power diodes characteristic; JD-VD curve; SiC; analytical model; crossing point; numerical model; temperature coefficient; Anodes; Doping; P-i-n diodes; Resistance; Schottky diodes; Silicon carbide; 4H-polytype of silicon carbide (4H-SiC); Diodes; ion implantation; semiconductor device modeling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2294078
