Title :
Monte Carlo Simulation of Sb-based Heterostructures
Author :
Rodilla, H. ; Gonzailez, T. ; Pardo, D. ; Mateos, J.
Author_Institution :
Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca
Abstract :
Narrow band gap semiconductors have become a great option to increase mobility and operation frequency in high electron mobility transistors (HEMTs). In this work, two different narrow band gap semicoductors, InAs and InSb, and their associated heterostructures, AlSb/InAs and AlInSb/InSb, have been studied by means of Monte Carlo simulations.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; high electron mobility transistors; indium compounds; narrow band gap semiconductors; semiconductor device models; AlInSb-InSb; AlSb-InAs; HEMT; InAs; InSb; Monte Carlo simulation; high electron mobility transistors; narrow band gap semiconductors; Analytical models; Discrete event simulation; Effective mass; Electron devices; Electron mobility; HEMTs; Impact ionization; MODFETs; Narrowband; Photonic band gap;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800453
