Title :
Low Temperature Operation of SiGe PNP HBTs
Author :
Crabbe, E.F. ; Harame, D.L. ; Meyerson, B.S. ; Stork, J.M.C. ; Sun, J.Y.C.
Author_Institution :
IBM T. J. Watson Research Center
Keywords :
Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Silicon germanium; Temperature; Transconductance; Very large scale integration; Voltage;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671853
