Efficient 3D Drift - Diffusion simulations of Implant Free Heterostructure Devices

Implant free (IF) heterostructure MOSFETs, considered as possible replacement of Si MOSFETs beyond the 16 nm technology generation, can take advantage of the high mobility in III-V materials to allow operation at very high speed and low power. We present a 3D parallel drift-diffusion device simulator developed to study the intrinsic parameter fluctuations affecting the behaviour of these devices. The parallel performance of the simulator is also analysed. Numerical results show super-linear efficiency on up to 16 processors.