مرکز منطقه ای اطلاع رساني علوم و فناوري - High Performance Deep Submicron Si MOSFETS Using Vertical Doping Engineering

DocumentCode :

2977220

Title :

High Performance Deep Submicron Si MOSFETS Using Vertical Doping Engineering

Author :

Yan, R.H. ; Lee, K.F. ; Jeon, D.Y. ; Kim, Y.O. ; Tennant, D.M. ; Westerwick, E.H. ; Chin, G.M. ; Morris, M.D. ; Early, K. ; Mulgrew, P.

Author_Institution :

AT&T Bell Laboratories

fYear :

1992

fDate :

21-24 June 1992

Keywords :

Doping profiles; Electrons; Implants; MOS devices; MOSFETs; Power supplies; Resistors; Temperature; Thermal engineering; Threshold voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location :

Cambridge, MA, USA

Type :

conf

DOI :

10.1109/DRC.1992.671854

Filename :

671854

Link To Document :