High Performance Deep Submicron Si MOSFETS Using Vertical Doping Engineering

Author

Yan, R.H. ; Lee, K.F. ; Jeon, D.Y. ; Kim, Y.O. ; Tennant, D.M. ; Westerwick, E.H. ; Chin, G.M. ; Morris, M.D. ; Early, K. ; Mulgrew, P.

Author_Institution

AT&T Bell Laboratories

fYear

1992

fDate

21-24 June 1992

Keywords

Doping profiles; Electrons; Implants; MOS devices; MOSFETs; Power supplies; Resistors; Temperature; Thermal engineering; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location

Cambridge, MA, USA

Type

DOI

10.1109/DRC.1992.671854

Filename

671854

Link To Document