Title :
Fundamental-Mode Operation of GaInAsP/InP Membrane DFB Lasers Bonded on SOI Substrate and its Waveguide Integration
Author :
Okumura, Tadashi ; Maruyama, Takeo ; Kanemaru, Masaki ; Sakamoto, Shinichi ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
A room-temperature continuous-wave operation under optical pumping was demonstrated with GalnAsP/InP membrane DFB lasers prepared on an SOI substrate integrated with a rib-waveguide structure. A threshold pump power of 11.3 mW and a sub-mode suppression ratio of 29 dB were obtained with a cavity length of 140 mum and a stripe width of 1.5 mum. Light output was obtained through the SOI waveguide of 500 mum-length.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; GaInAsP-InP; cavity length; membrane DFB lasers; optical pumping; rib-waveguide structure; room-temperature continuous-wave operation; waveguide integration; Biomembranes; Indium phosphide; Optical pumping; Optical scattering; Optical waveguides; Silicon on insulator technology; Substrates; Threshold current; Wafer bonding; Waveguide lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381116
