Fundamental-Mode Operation of GaInAsP/InP Membrane DFB Lasers Bonded on SOI Substrate and its Waveguide Integration

Author

Okumura, Tadashi ; Maruyama, Takeo ; Kanemaru, Masaki ; Sakamoto, Shinichi ; Tamura, Shigeo ; Arai, Shigehisa

Author_Institution

Tokyo Inst. of Technol., Tokyo

fYear

2007

fDate

14-18 May 2007

Firstpage

35

Lastpage

38

Abstract

A room-temperature continuous-wave operation under optical pumping was demonstrated with GalnAsP/InP membrane DFB lasers prepared on an SOI substrate integrated with a rib-waveguide structure. A threshold pump power of 11.3 mW and a sub-mode suppression ratio of 29 dB were obtained with a cavity length of 140 mum and a stripe width of 1.5 mum. Light output was obtained through the SOI waveguide of 500 mum-length.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; GaInAsP-InP; cavity length; membrane DFB lasers; optical pumping; rib-waveguide structure; room-temperature continuous-wave operation; waveguide integration; Biomembranes; Indium phosphide; Optical pumping; Optical scattering; Optical waveguides; Silicon on insulator technology; Substrates; Threshold current; Wafer bonding; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381116

Filename

4265873