Highly reliable operation of InGaAlAs/InGaAsP integrated lasers

We present a novel concept of free integration of InGaAlAs-based and InGaAsP-based components on a single InP substrate for higher-performance long-wavelength opto-electronic devices. A butt-jointing process with in situ cleaning was used to obtain high-quality integration of InGaAlAs and InGaAsP components. Combinations of InGaAlAs lasers integrated with InGaAsP, and InGaAsP lasers integrated with InGaAlAs, were fabricated using this process. Aging tests on both types of lasers showed no significant degradation in their driving current. It can thus be concluded that the free integration of InGaAlAs and InGaAsP is promising for development of higher-performance devices for the next generation of optical communications applications.