DocumentCode
2977310
Title
Design of Strain and Bandgap Profiles of InGaAsP Fabricated by Selective Area Metal-Organic Vapor Phase Epitaxy for Polarization Independent Operation
Author
Shioda, Tomonari ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2007
fDate
14-18 May 2007
Firstpage
43
Lastpage
46
Abstract
We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.
Keywords
energy gap; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; InGaAs-InGaAsP; InGaAsP fabrication; metal-organic vapor phase epitaxy; polarization independent operation; selective-area MOVPE; strain-bandgap distribution; vapor-phase diffusion model; Capacitive sensors; Epitaxial growth; Indium gallium arsenide; Microscopy; Monolithic integrated circuits; Optical polarization; Photonic band gap; Quantum well devices; Semiconductor optical amplifiers; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381118
Filename
4265875
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