DocumentCode
2977337
Title
Beyond CMOS: Logic Suitability of InGaAs HEMTs
Author
Del Alamo, Jesu A. ; Kim, Dae-Hyun
Author_Institution
Massachusetts Inst. of Technol., Cambridge
fYear
2007
fDate
14-18 May 2007
Firstpage
51
Lastpage
54
Abstract
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V\´s for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
Keywords
CMOS logic circuits; HEMT integrated circuits; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; CMOS scaling; HEMT; III-V compound semiconductors; InAs; InGaAs; high electron mobility transistors; logic suitability; transport properties; CMOS logic circuits; CMOS technology; Energy consumption; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MODFETs; Microwave transistors; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381120
Filename
4265877
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