• DocumentCode
    2977337
  • Title

    Beyond CMOS: Logic Suitability of InGaAs HEMTs

  • Author

    Del Alamo, Jesu A. ; Kim, Dae-Hyun

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V\´s for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
  • Keywords
    CMOS logic circuits; HEMT integrated circuits; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; CMOS scaling; HEMT; III-V compound semiconductors; InAs; InGaAs; high electron mobility transistors; logic suitability; transport properties; CMOS logic circuits; CMOS technology; Energy consumption; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MODFETs; Microwave transistors; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381120
  • Filename
    4265877