Title :
Beyond CMOS: Logic Suitability of InGaAs HEMTs
Author :
Del Alamo, Jesu A. ; Kim, Dae-Hyun
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V\´s for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
Keywords :
CMOS logic circuits; HEMT integrated circuits; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; CMOS scaling; HEMT; III-V compound semiconductors; InAs; InGaAs; high electron mobility transistors; logic suitability; transport properties; CMOS logic circuits; CMOS technology; Energy consumption; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MODFETs; Microwave transistors; Switches; Threshold voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381120