Title :
Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
Author :
Aldegunde, Manuel ; García-Loureiro, Antonio J. ; Seoane, Natalia ; Asenov, Asen ; Kalna, Karol
Author_Institution :
Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela
Abstract :
We describe a meshing strategy which allows the placement of the nodes of the mesh in the positions of the atoms in the selected regions of the device. This meshing strategy is used to simulate a 15 nm gate length Implant Free In0.75Ga0.25As MOSFET with a 3D parallel drift-diffusion simulator. We illustrate the use of this mesh in a small study of the impact of random dopants positioned in the iquest-doping layer after rigorous calibration against Monte Carlo simulations.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; mesh generation; 3D parallel drift-diffusion simulator; InGaAs; Monte Carlo simulations; atomistic simulation; implant-free nanoMOSFET; mesh generation; size 15 nm; Atomic layer deposition; Gallium arsenide; III-V semiconductor materials; Implants; Indium gallium arsenide; Lattices; MOSFET circuits; Mesh generation; Nanoscale devices; Semiconductor materials;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800468
