Title :
35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications
Author :
Mei, X.B. ; Yoshida, W. ; Deal, William ; Liu, P.H. ; Lee, Jeyull ; Uyeda, J. ; Dang, L. ; Wang, Jiacheng ; Liu, Wenxin ; Barsky, M. ; Kim, Y.M. ; Lange, Mandy ; Chin, T.P. ; Radisic, Vesna ; Gaier, Todd ; Fung, Andy ; Lai, Richard
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach
Abstract :
A new InP HEMT process has been developed with 35nm gate length and improved Ohmic contact. A gate-source capacitance of 0.4pF/mm is achieved with the reduced gate length, a 30% improvement over our baseline 70nm device. The contact resistance is successfully reduced to 0.07 with the newly designed contact layer combined with an alloyed Au/Ge/Ni/Au Ohmic metal. Good device characteristics has been demonstrated with a transconductance as high as 2 S/mm and a cutoff frequency fr of 420GHz. A single-stage common-source amplifier was fabricated with this new process. A peak gain of 5dB is measured at 265GHz. A MAG/MSG of 3dB at 300GHz was achieved, making the device suitable for applications at frequencies well into the millimeter-wave and even sub-millimeter-wave band.
Keywords :
high electron mobility transistors; indium compounds; microwave amplifiers; millimetre wave amplifiers; ohmic contacts; Au-Ge-Ni-Au Ohmic contact; InP; InP HEMT process; common-source amplifier; frequency 265 GHz; gate-source capacitance; high electron mobility transistor; millimeter wave application; size 35 nm; submillimeter wave application; transconductance; Capacitance; Contact resistance; Germanium alloys; Gold alloys; HEMTs; Indium phosphide; Millimeter wave devices; Nickel alloys; Ohmic contacts; Transconductance;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381122
