DocumentCode :
2977388
Title :
DC and RF Performance of 0.2-0.4 μm Gate Length InAs/AlSb HEMTs
Author :
Borg, Malin ; Lefebvre, Eric ; Malmkvist, Mikael ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain ; Grahn, Jan
Author_Institution :
Chalmers Univ. of Technol., Goteborg
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
67
Lastpage :
70
Abstract :
InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.
Keywords :
aluminium compounds; high electron mobility transistors; indium compounds; DC-RF performance; InAs-AlSb; InAs-AlSb HEMT; high electron mobility transistor; transconductance magnitude; Buffer layers; Doping; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Radio frequency; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381124
Filename :
4265881
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2977388
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