• DocumentCode
    2977388
  • Title

    DC and RF Performance of 0.2-0.4 μm Gate Length InAs/AlSb HEMTs

  • Author

    Borg, Malin ; Lefebvre, Eric ; Malmkvist, Mikael ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain ; Grahn, Jan

  • Author_Institution
    Chalmers Univ. of Technol., Goteborg
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.
  • Keywords
    aluminium compounds; high electron mobility transistors; indium compounds; DC-RF performance; InAs-AlSb; InAs-AlSb HEMT; high electron mobility transistor; transconductance magnitude; Buffer layers; Doping; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Radio frequency; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381124
  • Filename
    4265881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977388