Title :
Hilbert Curve Based Lateral Flux Capacitors
Author :
Gimeno, C. ; Celma, S. ; Calvo, B. ; Revuelto, J.
Author_Institution :
Group of Electron. Design (GDE-I3A), Univ. of Zaragoza, Zaragoza, Spain
Abstract :
This paper introduces a high-density capacitive structure using a quasifractal geometry based on the Hilbert curve. The proposed structure, fully compatible with standard digital CMOS processes, can be easily generated in iterations and has a high perimeter-area ratio, therefore producing a large capacitance in a specific area which increases with scaling due to the exploitation of lateral flux. To validate this novel Hilbert-based capacitor approach, three test structures-a conventional parallel-plate capacitor, an interdigitated capacitor and the proposed Hilbert capacitor-are implemented in an 180 nm 6-metal 1-poly CMOS process and compared in terms of capacitance density.
Keywords :
MIM devices; capacitance; capacitors; Hilbert curve; capacitance; high-density capacitive structure; interdigitaded capacitor; lateral flux capacitors; parallel-plate capacitor; perimeter-area ratio; quasifractal geometry; standard digital CMOS processes; CMOS process; CMOS technology; Filters; Geometry; Linearity; Parasitic capacitance; Q factor; Radio frequency; Switched capacitor circuits; Switching converters;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800470