High-Gain Top-Illuminated Optoelectronic Integrated Receiver

We present a monolithic photo-receiver based upon the InP/GalnAs HBT technology for optical communication at 1.55 mum. The photoreceiver consists of a top-illuminated photodiode and a transimpedance traveling wave amplifier. The same layers are used for the diodes and the base collector junction of the transistors. An advanced amplifier design, that achieves high bandwidth-to-f_T ratio, expands the frequency response of the receiver over 40 GHz. The photoreceiver exhibits an optoelectronic gain of 100 V/W, amplifier bandwidth of 52 GHz, and optoelectronic bandwidth in excess of 46 GHz. The same receiver, when biased differently to optimize group delay, exhibits an optoelectronic gain of 64 V/W, amplifier bandwidth of 44 GHz, and optoelectronic bandwidth in excess of 43 GHz. These are the highest reported gains for receivers operating beyond 40 GHz.