Title :
Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates
Author :
Gómez, A. ; Duenas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Kukli, K. ; Niinistö, J. ; Ritala, M. ; Leskelä, M.
Author_Institution :
Dept. de Electricidady Electron., Univ. de Valladolid, Valladolid
Abstract :
Zirconium oxide based metal-insulator-semiconductor (MIS) capacitors with highly doped Si substrates have been studied by electrical characterization. ZrO2 thin films were grown by atomic layer epostion (ALD), using ZrCp(NMe2)3 as precursor (with Cp=C5H5 and Me=CH3). The electrical measurements were carried out by using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) techniques. C-V and G-V curves indicated the behaviour of the interface states according to the frequency. Experimental evidence about tunnel conduction and bulk-controlled current, Poole-Frenkel effect, has been observed in different ranges of voltage.
Keywords :
MIS capacitors; substrates; Poole-Frenkel effect; ZrO2; atomic layer epostion; bulk-controlled current; capacitance-voltage technique; conductance-voltage technique; current-voltage technique; electrical characterization; electrical measurements; metal-insulator-semiconductor capacitors; silicon substrates; tunnel conduction; Atomic layer deposition; Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Current measurement; Electric variables measurement; Metal-insulator structures; Transistors; Zirconium;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800472
