Experimental characterization of NBTI effect on pMOSFET and CMOS inverter

In this paper, an experimental characterization of negative bias temperature instability (NBTI) effects on a single pMOSFET and CMOS inverter is done. The characterization has been performed for static and dynamic stresses with frequencies ranging from DC to GHz. The results show that NBTI produces a threshold voltage shift (DeltaV_T) on pMOSFETs, which is frequency independent. For DC stress, this DeltaV_T is double than in the AC case. In a CMOS inverter, NBTI produces a voltage transfer curve shift which is expected theoretically. As DeltaV_T, in a single pMOSFET, the voltage transfer curve shift in a CMOS inverter is frequency independent and almost double for DC stress in comparison to the AC case.