Title :
Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters
Author :
Murata, Hiroshi ; Kobayashi, Noriyo ; Okamura, Yasuyuki ; Kosugi, Toshihiko ; Enoki, Takatomo
Author_Institution :
Osaka Univ., Toyonaka
Abstract :
The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to high-speed photo-detectors and signal converters.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microwave photonics; optical signal detection; photodetectors; phototransistors; InP - Interface; drain current; focused laser beam; gate capacitance; high-electron mobility transistor; high-speed photo-detectors; signal converters; small signal gain; wavelength 1550 nm; HEMTs; High speed optical techniques; Intensity modulation; Laser beams; Laser transitions; MODFETs; Masers; Optical beams; Optical mixing; Optical modulation; HEMT; Optical signal detection; Opto-electronic mixing; Photo-detector;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381128
