Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters

Author

Murata, Hiroshi ; Kobayashi, Noriyo ; Okamura, Yasuyuki ; Kosugi, Toshihiko ; Enoki, Takatomo

Author_Institution

Osaka Univ., Toyonaka

fYear

2007

fDate

14-18 May 2007

Firstpage

84

Lastpage

86

Abstract

The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to high-speed photo-detectors and signal converters.

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; microwave photonics; optical signal detection; photodetectors; phototransistors; InP - Interface; drain current; focused laser beam; gate capacitance; high-electron mobility transistor; high-speed photo-detectors; signal converters; small signal gain; wavelength 1550 nm; HEMTs; High speed optical techniques; Intensity modulation; Laser beams; Laser transitions; MODFETs; Masers; Optical beams; Optical mixing; Optical modulation; HEMT; Optical signal detection; Opto-electronic mixing; Photo-detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381128

Filename

4265885