DocumentCode
2977491
Title
Enhanced optoelectronic conduction in polycrystalline silicon films deposited by a layer-by-layer technique using SiF4/H2
Author
He, Deyan ; Okada, Naoto ; Shimizu, Isamu
Author_Institution
Graduate Sch. at Nagatsuta, Tokyo Inst. of Technol., Japan
Volume
2
fYear
1994
fDate
5-9 Dec 1994
Firstpage
1640
Abstract
Polycrystalline silicon (poly-Si) films were deposited by means of a layer-by-layer technique at low temperatures using SiF4/H 2. The characteristics of Schottky contacts under illumination indicated that the material deposited by this technique is a suitable candidate for the active layers in photovoltaic devices. Optical absorption spectrum measurements showed that the band-to-band transition of electrons in the grains is a dominant light absorption process. The temperature dependent Hall effect measurements confirmed that the grain boundary barriers are reduced to a large degree. The unique optoelectronic properties of the material are thus correlated with these reduced grain boundary barriers
Keywords
Hall effect; Schottky barriers; absorption coefficients; elemental semiconductors; grain boundaries; photoconductivity; semiconductor thin films; silicon; solar cells; H2; Schottky contacts; Si; SiF4; active layers; band-to-band transition; enhanced optoelectronic conduction; grain boundary barriers; layer-by-layer technique; light absorption process; low temperatures; optical absorption spectrum; photovoltaic devices; polycrystalline silicon films; temperature dependent Hall effect; Absorption; Conducting materials; Conductive films; Grain boundaries; Lighting; Optical materials; Schottky barriers; Semiconductor films; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1460-3
Type
conf
DOI
10.1109/WCPEC.1994.520532
Filename
520532
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