Title :
Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction
Author :
Lin, E.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
An improved model for the Coulomb-enhanced and Urbach-broadened absorption spectrum that can be used to extract the band parameters for the band-edge region as well as to calculate the refractive index spectrum accurately.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; refractive index; spectral line broadening; ultraviolet spectra; visible spectra; Coulomb-enhanced absorption spectrum; GaAs; InP; Urbach-broadened absorption edge; band-parameter extraction; direct-gap semiconductors; refractive index spectrum; Absorption; Indium phosphide; Optical devices; Optical modulation; Optical refraction; Optical variables control; Piecewise linear techniques; Refractive index; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381132
