Characterization of a pH sensor based on an AlGiaN/GaN transistor

Author

Eroles, J. ; Bengoechea, A. ; Sánchez-García, M.A. ; Calle, F.

Author_Institution

Dep. Ing. Electron., Univ. Politec. de Madrid, Madrid

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

242

Lastpage

245

Abstract

Open gate field effect transistors based on AlGaN/GaN heterostructures - where a two dimensional electron gas lies close to the surface - have been used in a wide variety of sensors. In this work we report on the characterization of a pH sensor. We determine its surface potential sensitivity and sensitivity in muA/pH, in good agreement with theory. We obtain a sensor resolution below 0.01 pH, and study its response time under pH changes. Also, some experiments regarding the operation temperature and light conditions have been evaluated.

Keywords

III-V semiconductors; aluminium compounds; chemical sensors; gallium compounds; high electron mobility transistors; ion sensitive field effect transistors; pH measurement; surface potential; wide band gap semiconductors; AlGaN-GaN; ISFET; open gate heterostructure field effect transistors; pH sensor characterization; sensor resolution; surface potential sensitivity; two dimensional electron gas; Aluminum gallium nitride; Biosensors; Chemical sensors; Delay; Electron devices; FETs; Gallium nitride; Gas detectors; Sensor phenomena and characterization; Telecommunication standards;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800476

Filename

4800476