Title :
(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga) Sb FOR AlSb/InAs HEMTs
Author :
Lefebvre, Eric ; Borg, Malin ; Malmkvist, Mikael ; Grahn, Jan ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
Dry etching of AlSb and Al0.80Ga0.20Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl2:Ar) gas mixture without addition of BCI3. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa. Good DC/RF results, with extrinsic fT/fmax= 135/105 GHz, have been measured for a 2times50 mum HEMT with a gate length of 295 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; sputter etching; (Cl2:Ar) gas mixture; Al0.80Ga0.20Sb; AlSb; AlSb-InAs; BCI3 addition; HEMT; ICP/RIE dry etching; frequency 105 GHz; frequency 135 GHz; gate length; high electron mobility transistors; inductively coupled plasma etching; reactive ion etching; shallow mesa; Buffer layers; Dry etching; Gold; HEMTs; Indium phosphide; MODFETs; Oxidation; Plasma applications; Plasma measurements; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381139
