Theoretical and Experimental Study of the InP/InGaAs PIN Diode for Millimeter-wave MMIC Applications

Author

Yang, Jung Gil ; Choi, Sunkyu ; Jeong, Yongsik ; Yang, Kyounghoon

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2007

fDate

14-18 May 2007

Firstpage

133

Lastpage

136

Abstract

The DC and AC characteristics of InP/InGaAs PIN diodes have been investigated based on theoretical and experimental approaches. The switch performance of the PIN diode has been studied using a 2-D CAD simulator (Silvaco). Experimental data from a fabricated InP/InGaAs PIN diode was compared to the theoretical results. The developed InP/InGaAs PIN diode has demonstrated a 0.39 V turn on voltage, a 34 V breakdown voltage and a 5.23 THz cutoff frequency.

Keywords

III-V semiconductors; MIMIC; MMIC; gallium arsenide; indium compounds; microwave devices; p-i-n diodes; 2-D CAD simulator; AC characteristics; DC characteristics; InP-InGaAs; PIN diode; frequency 5.23 THz; gallium arsenide; indium compounds; millimeter-wave MMIC; voltage 0.39 V; voltage 34 V; Cutoff frequency; Impedance; Indium gallium arsenide; Indium phosphide; Insertion loss; MMICs; Microwave devices; Millimeter wave communication; Millimeter wave technology; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381141

Filename

4265898