DocumentCode
2977714
Title
Electron Nobilities And High-field Drift Velocities In Strained Silicon On Silicon-germanium Substrates
Author
Vogelsang, Th. ; Hofmann, K.R.
Author_Institution
Siemens AG
fYear
1992
fDate
21-24 June 1992
Keywords
Acoustic scattering; Electron mobility; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFETs; Monte Carlo methods; Optical scattering; Phonons; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671857
Filename
671857
Link To Document