Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT

Author

Knop, André ; Franke, W. Toke ; Fuchs, Friedrich W.

Author_Institution

Inst. of Power Electron. & Electr., Christian-Albrechts-Univ. of Kiel, Kiel

fYear

2008

fDate

1-3 Sept. 2008

Firstpage

69

Lastpage

75

Abstract

Here the switching and conducting performance of a SiC-JFET, an Emitter-Switching Bipolar Transistor (ESBT) and conventional power semiconductors as MOSFET and IGBT with Si- and SiC-diode is presented. The variety of power semiconductors is growing and there is a need to get rules to select them for the application given. The structure and special characteristics of the new devices are explained. The switching and conducting behavior of the devices is measured and investigated. The test circuit and the measurement method are presented. Based on the measured waveforms the power losses are calculated. The results of the switching and conducting performance of these power semiconductors are discussed.

Keywords

MOSFET; insulated gate bipolar transistors; junction gate field effect transistors; power semiconductor devices; switching; ESBT; IGBT; JFET; MOSFET; SiC; conducting performance; conventional power semiconductor; emitter-switching bipolar transistor; power losse; switching performance; test circuit; Bipolar transistors; Breakdown voltage; Capacitors; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power MOSFET; Power semiconductor switches; Silicon carbide; Switching loss; Bipolar device; Device characterization; IGBT; JFET; MOSFET; New switching devices; Power semiconductor device; SiC-device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th

Conference_Location

Poznan

Print_ISBN

978-1-4244-1741-4

Electronic_ISBN

978-1-4244-1742-1

Type

conf

DOI

10.1109/EPEPEMC.2008.4635246

Filename

4635246