DocumentCode :
2977751
Title :
Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors
Author :
Ng, Chai Wah ; Wang, Hong ; Radhakrishnan, K.
Author_Institution :
Nanyang Technol. Univ., Singapore
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
151
Lastpage :
153
Abstract :
In this work, a detailed study on the surface recombination in InP/InAlAs/GaAsSb/InP DHBTs was carried out. The experimental data clearly reveal that, by using an InP/InAlAs composite emitter to form a type-I E-B heterojunctuion, the surface recombination at low JC is suppressed with a reduction of KB_surf by a factor more than 50. The temperature-dependent study of KB_surf suggests that, at low JC level, the contribution of surface recombination velocity-limited mechanism cannot be ignored.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; InP-InAlAs-GaAsSb-InP; composite emitter; double heterojunction bipolar transistors; surface recombination; type-I E-B heterojunctuion; velocity-limited mechanism; Conference proceedings; Current density; Double heterojunction bipolar transistors; Gallium arsenide; Indium compounds; Indium phosphide; Microelectronics; Region 2; Spontaneous emission; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381146
Filename :
4265903
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2977751
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