• DocumentCode
    2977754
  • Title

    Temperature dependent performance of 1.55 μm AlGaInAs laser diodes

  • Author

    Yang, C. ; Stinz, A. ; Lester, L. ; Malloy, K.J.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    568
  • Abstract
    1.55 μm AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T0 and high injection efficiency.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; thermo-optical effects; 1.55 micron; AlGaInAs; injection efficiency; laser diodes; multiquantum-well lasers; quantum well number; quantum well strain; temperature dependent performance; Capacitive sensors; Diode lasers; Lasers and electrooptics; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature sensors; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201849
  • Filename
    1572915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977754