Title :
Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver
Author :
Luniewski, Piotr ; Jansen, Uwe
Author_Institution :
Infineon Technol. AG, Applic. Eng., Warstein
Abstract :
The performance of the new IGBT4 chip technology in PrimePACKtrade high power module housing is presented here together with the coreless transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15 V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.
Keywords :
driver circuits; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; power transformers; PrimePACK; coreless transformer technology driver IC; dynamic module behaviour; high-power IGBT chip module; unsymmetrical gate voltage drive; voltage -7 V to 15 V; voltage 1200 V; Electromagnetic interference; Insulated gate bipolar transistors; Inverters; Multichip modules; Power engineering and energy; Power generation; Silicon; Temperature; Transformer cores; Voltage; High voltage IC’s; IGBT; Power semiconductor device; Thermal design;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635249
