Title :
Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties
Author :
Muto, D. ; Naoi, H. ; Takado, S. ; Araki, T. ; Nanishi, Y.
Author_Institution :
Ritsumeikan Univ., Kyoto
Abstract :
InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-and Mg-doped InN layers were grown at 530degC for 1 hour under a nitrogen-rich condition. Mg was supplied by a conventional effusion cell at 130, 135, or 140degC. The thicknesses of the InN films were around 420 nm. All InN films were characterized using XRD, SEM, and Hall-effect measurements.
Keywords :
III-V semiconductors; X-ray diffraction; crystal structure; indium compounds; magnesium; molecular beam epitaxial growth; nitridation; sapphire; scanning electron microscopy; wide band gap semiconductors; Hall-effect measurement; InN:Mg; X-ray diffraction; molecular beam epitaxial growth; nitridation; scanning electron microscopy; size 420 mm; temperature 130 degC to 140 degC; temperature 280 degC; temperature 530 degC; time 1 hour; time 10 min; time 2 hour; Conductivity measurement; Conference proceedings; Diffraction; Doping; Electron mobility; Hall effect; Indium phosphide; Substrates; Temperature; X-ray scattering;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381148
