Title :
High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer
Author :
Chiu, Pei-Chin ; Liu, Wei-Sheng ; Shiau, Meng-Jie ; Chyi, Jen-Inn ; Chen, Wen-Yen ; Chang, Hsing-Szu ; Hsu, Tzu-Min
Author_Institution :
Nat. Central Univ., Jhongli
Abstract :
The effects of a thin InAlAsSb strain-reducing layer (SRL) on the optical properties of InAs/GaAs quantum dots (QDs) are studied. The adoption of the InAlAsSb SRL results in higher emission intensity and better size uniformity than its InAlAs counterpart. InAs QDs capped with the InAlAsSb SRL reveal a large state separation of 103 meV and thermal activation energy of 530 meV. The increase in radiative efficiency and temperature stability is attributed to high carrier confinement and reduced defects by the InAlAsSb SRL.
Keywords :
aluminium compounds; gallium arsenide; indium compounds; optical materials; photoluminescence; semiconductor epitaxial layers; semiconductor quantum dots; thermal stability; InAlAsSb; InAs-GaAs; carrier confinement; emission intensity; optical quality; photoluminescence; quantum dots; radiative efficiency; temperature stability; thermal activation energy; thin strain-reducing layer; Carrier confinement; Gallium arsenide; Indium compounds; Indium gallium arsenide; Laser excitation; Luminescence; Quantum dot lasers; Quantum dots; Stimulated emission; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381149
