DocumentCode
2977809
Title
Wide Bandgap Wavelength Control of InAs/InP Quantum Dots Array Waveguides by Selective MOVPE
Author
Akaishi, M. ; Yamauchi, Y. ; Okawa, T. ; Saito, Y. ; Yoshida, J. ; Shimomura, K.
Author_Institution
Sophia Univ., Tokyo
fYear
2007
fDate
14-18 May 2007
Firstpage
174
Lastpage
177
Abstract
We have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs.
Keywords
III-V semiconductors; MOCVD; indium compounds; integrated optics; masks; optical arrays; optical control; optical fabrication; optical waveguides; quantum dot lasers; self-assembly; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; wide band gap semiconductors; InAs-InP; asymmetrical mask procedure; double-cap procedure; selective MOVPE growth; self-assembled semiconductor quantum dots array waveguides; wavelength 140 nm; wide bandgap wavelength control; Conference proceedings; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical waveguides; Photonic band gap; Quantum dots; Semiconductor waveguides; Size control; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381150
Filename
4265907
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