Title :
Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thickness
Author :
Chuang, K.Y. ; Chen, C.Y. ; Tzeng, T.E. ; Feng, David J. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
Triple-layer InGaAs QDs of different spacer layer thickness are characterized by polarized electroluminescence and photocurrent spectroscopy. The results show that the decease of spacer layer thickness increases the TE/TM insensitivity.
Keywords :
adsorption; electroluminescence; gallium arsenide; indium compounds; quantum dot lasers; InGaAs; absorption polarization; electroluminescence; multiple quantum dots layer; photocurrent spectroscopy; Absorption; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Optical polarization; Photoconductivity; Quantum dots; Stationary state; Tellurium; Temperature measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381154
