DocumentCode :
2977882
Title :
WO3 nanorods on Si by anodising A1/W/Ti laers
Author :
Calavia, R. ; Vilanova, X. ; Correig, X. ; Llobet, E. ; Mozalev, A.
Author_Institution :
Univ. Rovira i Virgili, Tarragona
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
327
Lastpage :
329
Abstract :
In this paper we show a method based on electrochemistry to obtain tungsten oxide nanorods on the surface of a silicon substrate. The technique implies the anodisation of an aluminium/ tungsten bilayer and the selective etching of porous alumina. The resulting nanostructured metal oxide films show a very high surface to volume ratio, which is of interest in a wide range of applications including gas and bio sensors or as special coatings in medical applications.
Keywords :
aluminium; anodisation; etching; nanostructured materials; nanotechnology; porous materials; titanium; tungsten; tungsten compounds; Al-W-Ti; Al2O3; Si; WO3; anodisation; anodising layers; electrochemistry; nanorods; nanostructured metal oxide films; porous alumina; selective etching; silicon substrate; tungsten oxide nanorods; Aluminum; Electron devices; Scanning electron microscopy; Semiconductor films; Silicon; Sputtering; Substrates; Titanium; Tungsten; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800498
Filename :
4800498
Link To Document :
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